Rewritable Capacitance Disk Memory with Ferroelectric-Semiconductor Structure
Rewritable Capacitance Disk Memory with Ferroelectric-Semiconductor Structure
复制标题
铁电半导体结构可擦写电容盘存储器
DOI：
10.1143/jjap.33.5829
复制
发表时间：
1994
影响因子：
1.5
通讯作者：
S. Umemura
中科院分区：
文献类型：
--
作者：
R. Yamamoto;K. Sanada;S. Umemura
本文提出了一种新的铁电-半导体结构的双电容磁盘存储器。介质的铁电膜在垂直方向上极化以产生用于数据记录的耗尽电容。检测触针头和介质之间的电容以用于数据再现。由极化方向引起的电容变化量表明，该存储系统的记录密度可以大于1Gbit/cm 2。评估设备被构造用于动态位记录和再现，其中移动的触针头与介质表面接触。经确认，可以记录和再现0.4 µm空间波长的数据位。在我们的实验中，记录密度主要取决于记录针的尺寸，其极限也是通过对铁电半导体结构的数值模拟来估计的。
This paper presents a new rewritable capacitance disk memory with a ferroelectric-semiconductor structure. The ferroelectric film of the medium was poled in the perpendicular direction to generate depletion capacitance for data recording. Capacitance between the stylus head and the medium was detected for data reproduction. The amount of change in capacitance due to the poling direction showed that the recording density of this memory system could be more than 1 Gbit/cm2. Evaluation equipment was constructed for dynamic bit recording and reproduction, in which the mobile stylus head was in contact with the medium surface. It was confirmed that data bits with 0.4 µm spatial wavelength could be recorded and reproduced. In our experiment, recording density was mostly determined by the stylus size, and its limit was also estimated by the numerical simulation of ferroelectric semiconductor structure.