High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55-μm Band
High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55-μm Band
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DOI：
10.1109/lpt.2009.2035821
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发表时间：
2010-01-15
影响因子：
2.6
通讯作者：
Kawanishi, Tetsuya
中科院分区：
文献类型：
--
作者：
Akahane, Kouichi;Yamamoto, Naokatsu;Kawanishi, Tetsuya
采用应变补偿的方法制备了由30层InAs量子点组成的广域激光二极管。该器件在1529 nm的脉冲模式下表现出基态激光，在室温（20℃-80℃）下具有113 K的高特征温度。由于应变补偿提供了高量子点密度，从而实现了基态激光。
We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 degrees C-80 degrees C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.