Electric-pulse-induced capacitance change effect in perovskite oxide thin films
Electric-pulse-induced capacitance change effect in perovskite oxide thin films
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DOI：
10.1063/1.2337387
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发表时间：
2006-09-01
影响因子：
3.2
通讯作者：
Li, Jianren
中科院分区：
文献类型：
--
作者：
Liu, Shangqing;Wu, Naijuan;Li, Jianren
在室温下，在低电压短脉冲作用下，观察到钙钛矿氧化物薄膜的可逆非挥发性电容变化效应。脉冲引起的非易失性电容的变化被认为是共存的脉冲引起的非易失性电阻的变化之前报道。结果表明，Pr0.7Ca0.3MnO3样品的电容值可以设置为两个特定状态或多个离散电容水平。所观察到的效应具有潜在的应用，包括可变电容器和非易失性二态或多电平存储器。(c)2006年，美国物理学会。
A reversible nonvolatile capacitance change effect has been observed in perovskite oxide thin films at room temperature under the application of electrical pulses of low voltage and short duration. The pulse-induced nonvolatile capacitance change is seen to coexist with a pulse-induced nonvolatile resistance change reported earlier. It is shown that the capacitance values of Pr0.7Ca0.3MnO3 samples can be set to either two specific states or to multiple discrete capacitance levels. The observed effect has potential applications including variable capacitors and nonvolatile two-state or multiple-level memories. (c) 2006 American Institute of Physics.