Silicon nitride assisted 1×64 optical phased array based on a SOI platform
Silicon nitride assisted 1×64 optical phased array based on a SOI platform
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基于SOI平台的氮化硅辅助1×64光学相控阵
DOI：
10.1364/oe.420921
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发表时间：
2021
期刊：
影响因子：
3.8
通讯作者：
Yu Mingbin
中科院分区：
文献类型：
--
作者：
Qing Wang;Wang Shuxiao;Lianxi Jia;Yan Cai;Wencheng Yue;Yu Mingbin
我们展示了一个1×64的光学相控阵（OPA）的基础上，绝缘体上硅（SOI）平台与集成氮化硅。OPA的输入端口是使用氮化硅波导制造的，这是由于其允许更多光功率的优点。由于硅具有较高的热光系数，移相器采用带加热器的硅波导。在发射极中采用双层氮化硅辅助光栅来降低发射强度，并通过增加发射极长度来减小光斑尺寸。光栅发射器长度为1.5mm，测量的光学相控阵视场为35.5°×22.7°，光斑尺寸为0.69°×0.075°。
We demonstrate a 1×64 optical phased array (OPA) based on a silicon on insulator (SOI) platform with integrated silicon nitride. The input port of the OPA is fabricated using a silicon nitride waveguide due to its advantage of allowing more optical power. The phase shifter is a silicon waveguide with heater because of the higher thermo-optic coefficient of silicon. And a double layer silicon nitride assisted grating is used in the emitter to reduce the emission strength and then increase the length of emitter to reduce the spot size. The length of the grating emitter is 1.5 mm and the measured field of view of this optical phased array is 35.5°×22.7° with spot size of 0.69°×0.075°.