Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition
Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition
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低压化学气相沉积法在 Si 上外延 Al2O3 薄膜
DOI：
10.1063/1.99685
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发表时间：
1988
影响因子：
4
通讯作者：
N. Ohtake
中科院分区：
文献类型：
--
作者：
M. Ishida;I. Katakabe;Tetsuro Nakamura;N. Ohtake
采用低压化学气相沉积法，以Al（CH 3）3和N2 O为原料，在1000 °C以上的衬底温度下，在（100）Si衬底上成功地生长了异质外延Al 2 O3薄膜。从反射高能电子衍射分析，发现外延膜是具有（100）Al 2 O3//（100）Si取向关系的γ-Al 2 O3。制造了具有700埃厚的Al 2 O3膜作为栅极绝缘体的电容器，并且显示出无滞后的高频电容-电压特性。通过准静态电容-电压测量观察到1.7×1011 cm−2 eV−1的界面态密度。在3.0 V的栅极电压下，漏电流为9.7×10−11 A/cm 2。
Heteroepitaxial Al2O3 films were grown successfully on (100)Si substrates at substrate temperatures above 1000 °C by low‐pressure chemical vapor deposition with the use of N2 bubbled Al(CH3)3 and N2O. From reflection high‐energy electron diffraction analysis, the epitaxial films were found to be γ‐Al2O3 with an orientation relation of (100)Al2O3//(100)Si. Capacitors with 700‐A‐thick Al2O3 films as gate insulators were fabricated and showed high‐frequency capacitance‐voltage characteristics without hysteresis. An interface state density of 1.7×1011 cm−2 eV−1 was observed by using quasistatic capacitance‐voltage measurements. The leakage current was 9.7×10−11 A/cm2 at a gate voltage of 3.0 V.