Low-temperature grovm quaternary Heusler-compound Co_2Mn_<1-x>Fe_xSi films on Ge(111)
Low-temperature grovm quaternary Heusler-compound Co_2Mn_<1-x>Fe_xSi films on Ge(111)
复制标题
Ge(111)上低温生长四元Heusler化合物Co_2Mn_<1-x>Fe_xSi薄膜
DOI：
10.1063/1.3563039
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M.Miyao
中科院分区：
文献类型：
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作者：
S.Yamada;K.Hamaya;T.Murakami;B.Varaprasad;Y.K.Takahashi;A.Rajanikanth;K.Hono;M.Miyao
研究了Ge（111）衬底上高度有序的四元Co{sub 2}Mn{sub 1-x}Fe{sub x}Si薄膜在Si-大规模集成电路（LSI）平台上的自旋电子器件应用。通过使用低温分子束外延技术，相对大的磁矩被证明为x在0.50和1.0之间，尽管极低的温度生长130 ° C。C.此外，即使在与Si-LSI技术兼容的IV族半导体衬底Ge上也可以实现L2{sub 1}有序晶体结构。用点接触Andreev反射法估算了Co{sub 2}Mn{sub 0.5}Fe{sub 0.5}Si薄膜的自旋极化率为P= 0.5 8 {+-} 0.0 2。我们相信，这项研究将是第一步的高性能自旋电子应用集成与下一代超大规模集成电路。
Highly ordered quaternary Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 deg. C. Also, L2{sub 1}-ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co{sub 2}Mn{sub 0.5}Fe{sub 0.5}Si films is estimated to be P= 0.58 {+-} 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.