Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
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DOI：
10.1002/aelm.201900892
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发表时间：
2020-01-14
影响因子：
6.2
通讯作者：
Lemme, Max C.
中科院分区：
文献类型：
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作者：
Belete, Melkamu;Kataria, Satender;Lemme, Max C.
以纳米二硫化钼(MoS_2)为活性材料的忆阻器具有非挥发性的阻性开关特性。垂直异质结由硅(Si)、垂直排列的MoS_2和铬/金金属电极组成。电学表征表明，S至少在2500年内保持稳定，是一个双极无形成的开关过程。在常温和真空条件下进行的控制实验表明，观察到的电阻开关是基于羟基离子(OH-)的。这源于MoS2对吸附的水分子的催化裂解。实验结果结合分析模拟进一步表明，电场驱动的可移动的OH-离子沿垂直MoS_2层的运动影响了Si/MoS_2界面的势垒。这项工作中使用的可扩展和与半导体生产兼容的器件制造工艺为将这种忆阻器集成到现有的硅技术中以用于未来的神经形态应用提供了机会。观察到的离子基塑性可用于基于过渡金属二卤化物和其他2D材料的离子电子器件中，用于记忆应用。
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS2) as the active material. The vertical heterostructures consist of silicon (Si), vertically aligned MoS2, and chrome/gold metal electrodes. Electrical characterizations reveal a bipolar and forming-free switching process with stable retention for at least 2500 s. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH-). These originate from catalytic splitting of adsorbed water molecules by MoS2. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH- ions along the vertical MoS2 layers influences the energy barrier at the Si/MoS2 interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing Si technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionic-electronic devices based on transition metal dichalcogenides and other 2D materials for memristive applications.