Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films
Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films
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DOI：
10.1007/s11664-012-2155-x
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发表时间：
2012-06
影响因子：
2.1
通讯作者：
G. Zhu;L. Zhi;Huijuan Yang;Hua-rui Xu;A. Yu
中科院分区：
文献类型：
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作者：
G. Zhu;L. Zhi;Huijuan Yang;Hua-rui Xu;A. Yu
本文采用不同密度的氧化铟锡靶材沉积ITO薄膜。在室温下沉积薄膜，750℃退火。研究了薄膜的显微结构、电学和光学性能。结果表明，靶密度对射频（RF）溅射ITO薄膜的性能和沉积速率没有影响，而对直流（DC）溅射薄膜则没有影响。因此，在使用射频溅射时，靶材不需要高密度，可以重复使用。
In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.