Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion
Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion
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DOI：
10.1002/lpor.201800149
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发表时间：
2018-10-01
影响因子：
11
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Chang, Lin;Boes, Andreas;Bowers, John E.
通过非线性集成光子学的发展，已经取得了巨大的科学进步。突出的例子是微谐振器中的克尔频率梳生成，以及非线性光子波导中的超连续谱生成和频率转换。高转换效率使得非线性光学的应用成为可能，包括高速光信号处理、计量以及量子通信和计算等广泛的方向。在这项工作中，展示了用于非线性光子学的绝缘体上砷化镓（GaAs）平台。 GaAs 具有最高的二阶和三阶非线性光学系数，并且使用二氧化硅包层可使波导具有较大的折射率对比度和较低的传播损耗，适用于非线性过程的扩展设计。通过利用这些特性并开发 GaAs 纳米加工，在 2 μm 基波波长下，标准化二次谐波效率达到了创纪录的 13000% W-1 cm(-2)。这项工作为高性能非线性光子集成电路铺平了道路，它不仅可以通过从根本上降低功耗和占地面积来在实验室外过渡先进的功能，而且还可以实现未来的光源和探测器。
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr frequency comb generation in microresonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. A high conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics is demonstrated. GaAs has among the highest second- and third-order nonlinear optical coefficients, and the use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded designs of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, a record normalized second-harmonic efficiency of 13000% W-1 cm(-2) at a fundamental wavelength of 2 mu m is reported. This work paves the way for high performance nonlinear photonic integrated circuits, which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.