Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms
Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms
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通过离子注入镓、铝和硼原子增强氧化锌薄膜的导电性
DOI：
10.1063/1.356310
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发表时间：
1994
影响因子：
3.2
通讯作者：
T. Wada
中科院分区：
文献类型：
--
作者：
S. Kohiki;M. Nishitani;T. Wada
采用射频磁控溅射法在室温下沉积高阻氧化锌薄膜，研究了离子注入对氧化锌导电性能的影响，以降低氧空位的影响。在掺杂1×1017原子/cm 2镓的情况下，注入态薄膜的电导率为1.0×103/Ω cm，并且随着在氮气或氧气气氛中提高退火温度，其增加到3.7×103/Ω cm，这是氧化锌薄膜报道的最高电导率。掺杂铝的膜的导电性略低于掺杂镓的膜的导电性。在元素镓、铝和硼中，镓在提高导电性方面是最有效的，而硼最不有效。有效性的顺序是由掺杂剂的电负性来解释的。
Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive zinc oxide thin films deposited by rf magnetron sputtering at room temperature to reduce the effect of oxygen vacancies. With the doping by 1×1017 atoms/cm2 gallium the conductivity is 1.0×103/Ω cm for as‐implanted film and it increases up to 3.7×103/Ω cm, the highest conductivity reported for zinc oxide films, with raising the annealing temperature in either a nitrogen or oxygen atmosphere. The conductivity of aluminum‐doped films is slightly lower than those of gallium‐doped films. Among the elements gallium, aluminum, and boron, gallium is the most effective in enhancing the conductivity and boron is the least. The order of the effectiveness is explained by the electronegativity of the dopants.