Photoluminescence properties of size-selected Si nanocluster films prepared by laser ablation
Photoluminescence properties of size-selected Si nanocluster films prepared by laser ablation
复制标题
激光烧蚀制备的尺寸选定的硅纳米团簇薄膜的光致发光性能
DOI：
10.1007/s003390000575
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
K. Takayanagi
中科院分区：
文献类型：
--
作者：
H.;A. Okano;K. Takayanagi
尺寸分散的硅纳米团簇薄膜是通过使氩气束垂直于激光烧蚀技术产生的硅团簇光束交叉的方法合成的。由于氩气碰撞，纳米团簇的飞行方向发生改变，并且较小的纳米团簇进一步偏离主团簇束的轴。尺寸分散的纳米团簇薄膜暴露在空气中后表现出强烈的红色光致发光（PL）。 PL 峰值能量根据样品位置在 1.42 和 1.72 eV 之间变化。通过透射电子显微镜表征的氧化纳米团簇的平均直径在主团簇束轴位置处为 10 nm，并且随着偏离轴而变小。讨论了 PL 峰值能量与氧化硅纳米团簇尺寸之间的关系。
Size-dispersed Si nanocluster films have been synthesized by a method of crossing an Ar gas beam perpendicularly to a silicon cluster beam that is produced by a laser ablation technique. Flight directions of the nanoclusters are changed due to Ar gas collisions, and smaller nanoclusters are deflected further from the axis of the primary cluster beam. The size-dispersed nanocluster films exhibit strong red photoluminescence (PL) after exposure to the air. The PL peak energy changes between 1.42 and 1.72 eV depending on the sample position. The average diameter of the oxidized nanoclusters characterized by transmission electron microscopy is 10 nm at the position of the primary cluster beam axis and becomes smaller as deviated from the axis. The relation between the PL peak energy and the size of the oxidized Si nanoclusters is discussed.