Yb-doped mixed-sesquioxide films grown by pulsed laser deposition
Yb-doped mixed-sesquioxide films grown by pulsed laser deposition
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DOI：
10.1016/j.jcrysgro.2018.03.039
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发表时间：
2018-06-01
影响因子：
1.8
通讯作者：
Mackenzie, Jacob, I
中科院分区：
文献类型：
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作者：
Prentice, Jake J.;Grant-Jacob, James A.;Mackenzie, Jacob, I
生长和表征的成分调整，掺镱混合氧化镥，氧化钪，纯镥和氧化钪晶体薄膜。脉冲激光沉积生长这些倍半氧化物薄膜，厚度达20 μ m，（0 0 0 1）蓝宝石衬底上。通过改变靶中镥与钪的原子比，可以调节所得膜的晶格参数以匹配单晶c切蓝宝石衬底的晶格参数，从而实现
Growth and characterization of compositionally tuned, ytterbium-doped mixed lutetium-scandium oxide, and pure lutetia and scandia crystalline films are presented. Pulsed laser deposition was employed to grow these sesquioxide films, of thicknesses up to 20 mu m, on (0 0 0 1)-sapphire substrates. By varying the atomic ratio of lutetium to scandium in the target, the lattice parameter of the resulting films could be tuned to match that of the single-crystal c-cut sapphire substrate and thereby achieve a lattice mismatch of