Far-infrared emission by resonant-polaron effects in narrow-band-gap Hg1-xCdxTe.
Far-infrared emission by resonant-polaron effects in narrow-band-gap Hg1-xCdxTe.
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DOI：
10.1103/physrevlett.67.1310
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发表时间：
1991-09
影响因子：
8.6
通讯作者：
Fuchs;Schneider;Koidl;Schwarz;Walcher;Triboulet
中科院分区：
文献类型：
--
作者：
Fuchs;Schneider;Koidl;Schwarz;Walcher;Triboulet
我们报告的第一个实验观察到的远红外发射的半导体的剩余辐射带内。我们对带隙Hg 1-xCdxTe（x = 0.17）进行了傅里叶变换发射实验。在Ar ~+激光激发下，在材料的光学声子能量（137.5和157.5cm-1）处发现了一个发射光谱
We report on the first experimental observation of far-infrared emission within the reststrahlen band of a semiconductor. We have performed Fourier-transform emission experiments on marrow-band-gap Hg 1-x Cd x Te (x≃0.17). Under Ar + -laser excitation, we find an emission spectrum at the longitudinal-optical-phonon energies of the material (137.5 and 157.5 cm -1 )