Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
复制标题
DOI：
10.1063/1.2173188
复制
发表时间：
2006-02-15
影响因子：
3.2
通讯作者：
David, JPR
中科院分区：
文献类型：
--
作者：
Liu, HY;Steer, MJ;David, JPR
它表明，发光的InAs量子点（QDs）盖与GaAsSb可以从1.28 μ m扩展到1.6 μ m，通过增加覆盖层的Sb成分从14%到26%。光致发光激发光谱被用来研究这种大红移的性质。的主导机制被证明是形成的II型之间的电子状态的InAs量子点和空穴状态的GaAsSb覆盖层的过渡。讨论了利用这些结构制作1.55 μ m注入激光器的前景。(c)2006年，美国物理学会。
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 mu m by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 mu m injection lasers are discussed. (c) 2006 American Institute of Physics.