Effect on dark matter exclusion limits from new silicon photoelectric absorption measurements
Effect on dark matter exclusion limits from new silicon photoelectric absorption measurements
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DOI：
10.1103/physrevd.104.063002
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发表时间：
2020-10
影响因子：
5
通讯作者：
B. Krosigk;Matthew Wilson;Chris Stanford;B. Cabrera;R. Calkins;D. Jardin;N. Kurinsky;F. Ponce;Chih-Pan Wu
中科院分区：
文献类型：
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作者：
B. Krosigk;Matthew Wilson;Chris Stanford;B. Cabrera;R. Calkins;D. Jardin;N. Kurinsky;F. Ponce;Chih-Pan Wu
低温硅探测器技术的最新突破允许观察通过靶材料内的粒子相互作用释放的单个电子-空穴对。这意味着对能量沉积的敏感性低至最小的带隙，硅的带隙为1.2eV，因此对eV/c^2 $尺度的玻色子暗物质和质量低于100 MeV/c^2 $的热暗物质敏感。各种相互作用通道，可以探测最低的当前可达的直接搜索质量有关的标准光电吸收。在任何这些相应的暗物质信号模型中，光电吸收截面上的任何不确定性都会传播到所产生的排斥极限或潜在观测的重要性中。利用斯坦福大学~University最近进行的硅光电吸收截面的首次精确测量，本文探讨了在低能量和低温下对这些暗物质搜索具有准确知识的重要性。
Recent breakthroughs in cryogenic silicon detector technology allow for the observation of single electron-hole pairs released via particle interactions within the target material. This implies sensitivity to energy depositions as low as the smallest band gap, which is $\sim1.2$\,eV for silicon, and therefore sensitivity to eV/$c^2$-scale bosonic dark matter and to thermal dark matter at masses below 100\,MeV/$c^2$. Various interaction channels that can probe the lowest currently accessible masses in direct searches are related to standard photoelectric absorption. In any of these respective dark matter signal models any uncertainty on the photoelectric absorption cross section is propagated into the resulting exclusion limit or into the significance of a potential observation. Using first-time precision measurements of the photoelectric absorption cross section in silicon recently performed at Stanford~University, this article examines the importance having accurate knowledge of this parameter at low energies and cryogenic temperatures for these dark matter searches.