Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)
Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)
复制标题
碳 (C)、碳化硅 (SiC) 和氮化硅 (Si3N4) 与液态硅 (Si) 的润湿性
DOI：
10.1007/s11837-020-04369-0
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
M. Barati
中科院分区：
文献类型：
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作者：
H. Iyer;Yuchang Xiao;Damian Durlik;K. Danaei;Leili Tafaghodi Khajavi;M. Barati
在精炼过程中形成的固体夹杂物的分离是与冶金精炼硅相关的主要挑战之一。采用座滴法研究了固体碳(C)、碳化硅(SiC)和氮化硅(Si3N4)衬底与液态硅的润湿性。本研究的目的是找到从液态硅中分离上述夹杂物的合适温度。在每个衬底上熔化6 N + 纯度的硅，在1420°C到1525°C的温度范围内测量接触角，每个系统在略有还原的气氛中测量接触角。C-Si的接触角在1420℃时为14°，在1520℃时达到11°。在相同的温度范围内，C-Si体系的接触角从46°降至37°。温度对Si3N4-Si系统接触角的影响更为明显，在1435-1525℃范围内，接触角从108°下降到68°。
Separation of the solid inclusions formed during the refining process is one of the major challenges associated with metallurgical refining of silicon (Si). Wettability of solid carbon (C), silicon carbide (SiC) and silicon nitride (Si3N4) substrates with liquid silicon was examined using sessile drop technique. This study was performed with the aim of finding the appropriate temperature for separating the above inclusions from liquid Si. Silicon of 6 N + purity was melted over each substrate and contact angle was measured in the temperature range of 1420°C to 1525°C in a slightly reducing atmosphere for each system. The contact angle for C-Si is 14° at 1420°C and reaches the value of 11° at 1520°C. In the same temperature range, the contact angle for SiC-Si system decreases from 46° to 37°. The effect of temperature on contact angle is more pronounced for Si3N4-Si system with a decline from 108° to 68° in the range of 1435–1525°C.