Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation
Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation
复制标题
通过 MOVPE 随 V/III 比率变化聚结 InP 外延横向过度生长
DOI：
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发表时间：
2012
影响因子：
2.1
通讯作者：
J. Bowers
中科院分区：
文献类型：
--
作者：
N. Julian;P. Mages;Chong Zhang;J. Zhang;S. Kraemer;S. Stemmer;S. Denbaars;L. Coldren;Pierre Petroff;J. Bowers
The effects of V/III ratio and seed window orientation on the coalescence of epitaxial lateral overgrowth InP over SiO2 using metal organic vapor-phase epitaxy with tertiary butyl phosphine were investigated. Parallel lines having θ = 60° and 30° off [0$$ ar{1} $$1] were coalesced, and their lateral growth rate variation with V/III was measured. Coalescence of lines separated by narrow angles in a star-like pattern was also studied. We find the greatest extent of coalescence to occur when the window stripe is oriented just off of the ⟨010⟩ directions. V/III ratio strongly affects the extent of coalescence, showing an alternating enhancement or inhibition depending on which side of the ⟨010⟩ direction the stripes are oriented. The variation in quality of coalesced material between stripes separated by narrow angles is examined with cross-sectional transmission electron microscopy, illustrating the most problematic growth directions under two V/III ratio conditions.
