Anomalous Aharonov-Bohm Conductance Oscillations from Topological Insulator Surface States
Anomalous Aharonov-Bohm Conductance Oscillations from Topological Insulator Surface States
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DOI：
10.1103/physrevlett.105.206601
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发表时间：
2010-11-11
影响因子：
8.6
通讯作者：
Vishwanath, Ashvin
中科院分区：
文献类型：
--
作者：
Zhang, Yi;Vishwanath, Ashvin
研究了拓扑绝缘体纳米线在沿着其长度方向外加磁场时，其表面态引起的Aharonov-Bohm（AB）电导振荡。与强表面无序，这些振荡被预测有一个组件与异常周期Phi（0）hc/e，两倍的常规周期。电导最大值在1/2 Phi（0）的奇数倍处达到，这意味着电子的pi AB相增强了表面态的金属性质。这种效应对于拓扑绝缘体是特殊的，并且作为定义输运性质。一个关键的成分，表面曲率诱导的Berry相位，在这里强调。我们讨论了Bi 2Se 3纳米带最近的实验的相似性和差异，观察这种效果的最佳条件。
We study Aharonov-Bohm (AB) conductance oscillations arising from the surface states of a topological insulator nanowire, when a magnetic field is applied along its length. With strong surface disorder, these oscillations are predicted to have a component with anomalous period Phi(0) hc/e, twice the conventional period. The conductance maxima are achieved at odd multiples of 1/2 Phi(0), implying that a pi AB phase for electrons strengthens the metallic nature of surface states. This effect is special to topological insulators, and serves as a defining transport property. A key ingredient, the surface curvature induced Berry phase, is emphasized here. We discuss similarities and differences from recent experiments on Bi2Se3 nanoribbons, and optimal conditions for observing this effect.