Thin dielectric degradation during silicon selective epitaxial growth process
Thin dielectric degradation during silicon selective epitaxial growth process
复制标题
硅选择性外延生长过程中薄介电质的退化
DOI：
10.1063/1.115071
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发表时间：
1995
影响因子：
4
通讯作者：
W. Oldham
中科院分区：
文献类型：
--
作者：
Yang‐Chin Shih;Guobiao Zhang;C. Hu;W. Oldham
硅选择性外延生长 (SEG) 工艺的一个基本问题是预外延硅表面处理和 SEG 环境对暴露于预清洁环境的薄绝缘材料性能的影响。在这项研究中，我们将 10-50 nm 热氧化物中的针孔形成与相似厚度的更坚固的氧化物/氮化物复合材料进行了比较。薄热氧化物的退化归因于异位预外延表面处理、原位氢气预烘烤和选择性外延沉积过程中超薄氧化物层中针孔的形成和扩展。氧化物/氮化物/氧化物（ONO）结构对介电退化的优异抵抗力可能归因于夹层氮化硅层的存在，该夹层氮化硅层抑制了预外延湿法清洁和选择性外延生长过程中氧化物分解的机制。硅选择性外延生长（SEG）工艺的一个基本问题是预外延硅表面处理和SEG环境对暴露于预清洁环境的薄绝缘材料性能的影响。在这项研究中，我们将 10-50 nm 热氧化物中的针孔形成与相似厚度的更坚固的氧化物/氮化物复合材料进行了比较。薄热氧化物的退化归因于异位预外延表面处理、原位氢气预烘烤和选择性外延沉积过程中超薄氧化物层中针孔的形成和扩展。氧化物/氮化物/氧化物（ONO）结构对介电退化的优异抵抗力可能归因于夹层氮化硅层的存在，该氮化硅层抑制了外延前湿法清洁和选择性外延生长过程中氧化物分解的机制。
A fundamental issue in silicon selective epitaxial growth (SEG) processes is the impact of the pre‐epitaxy silicon surface treatments and the SEG ambient on the properties of thin insulating materials exposed to the preclean environment. In this study, we compare pinhole formation in 10–50 nm thermal oxides with more robust oxide/nitride composites of similar thickness. The degradation of thin thermal oxide is attributed to pinhole formation and expansion in the ultrathin oxide layers during ex situ pre‐epi surface treatments, in situ H2 prebake, and selective epitaxial deposition process. The superior resistance of oxide/nitride/oxide (ONO) structures to dielectric degradation may be attributed to the existence of the sandwiched silicon nitride layer which suppresses the mechanism of oxide decomposition during the pre‐epitaxy wet cleaning, and the selective epitaxial growth processes.A fundamental issue in silicon selective epitaxial growth (SEG) processes is the impact of the pre‐epitaxy silicon surface treatments and the SEG ambient on the properties of thin insulating materials exposed to the preclean environment. In this study, we compare pinhole formation in 10–50 nm thermal oxides with more robust oxide/nitride composites of similar thickness. The degradation of thin thermal oxide is attributed to pinhole formation and expansion in the ultrathin oxide layers during ex situ pre‐epi surface treatments, in situ H2 prebake, and selective epitaxial deposition process. The superior resistance of oxide/nitride/oxide (ONO) structures to dielectric degradation may be attributed to the existence of the sandwiched silicon nitride layer which suppresses the mechanism of oxide decomposition during the pre‐epitaxy wet cleaning, and the selective epitaxial growth processes.