Efficient In-Memory Processing Using Spintronics
Efficient In-Memory Processing Using Spintronics
复制标题
DOI：
10.1109/lca.2017.2751042
复制
发表时间：
2018-01-01
影响因子：
2.3
通讯作者：
Wang, Jian-Ping
中科院分区：
文献类型：
--
作者：
Chowdhury, Zamshed;Harms, Jonathan D.;Wang, Jian-Ping
随着数据检索的开销变得令人生畏，将处理器逻辑带到数据驻留的内存变得更加节能。虽然传统的CMOS结构不适合逻辑和存储器的紧密集成，但新兴的自旋电子技术显示出显着的多功能性。本文介绍了一种新型的基于自旋电子学的内存处理（PIM）框架，称为计算RAM（CRAM），以解决数据密集型计算问题。
As the overhead of data retrieval becomes forbidding, bringing processor logic to the memory where the data reside becomes more energy-efficient. While traditional CMOS structures are unsuited to the tight integration of logic and memory, emerging spintronic technologies show remarkable versatility. This paper introduces a novel spintronics-based processing-in-memory (PIM) framework called computational RAM (CRAM) to solve data-intensive computing problems.