Colossal anisotropic resistivity and oriented magnetic domains in strained La0.325Pr0.3Ca0.375MnO3 films
Colossal anisotropic resistivity and oriented magnetic domains in strained La0.325Pr0.3Ca0.375MnO3 films
复制标题
应变 La0.325Pr0.3Ca0.375MnO3 薄膜中的巨大各向异性电阻率和定向磁畴
DOI：
10.1063/1.4878557
复制
发表时间：
2014-05-19
影响因子：
4
通讯作者：
Li, Xiaoguang
中科院分区：
文献类型：
--
作者：
Jiang, Tao;Yang, Shengwei;Li, Xiaoguang
研究了低对称性(011)取向(LaAlO_3)_(0.3)(SrAl_(0.5)Ta_(0.5)O_3)_(0.7)衬底上生长的不同厚度的La0.325Pr0.3Ca0.375MnO_3薄膜的磁各向异性和电阻各向异性。在磁和电子相分离区域，30 nm薄膜的各向异性电阻率(AR)为∼105%，具有反常的大各向异性磁阻。而对于12 0 nm薄膜，由于应变松弛，最大AR值显著降低(∼2 × 10 3%)。巨大的AR与磁畴的定向形成密切相关，应变效应的特征被认为对人工材料和器件的设计是有用的。
Magnetic and resistive anisotropies have been studied for the La0.325Pr0.3Ca0.375MnO3 films with different thicknesses grown on low symmetric (011)-oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of ∼105% and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (∼2 × 103%) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices.