ZrB2 Substrate for Nitride Semiconductors
ZrB2 Substrate for Nitride Semiconductors
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氮化物半导体用 ZrB2 衬底
DOI：
10.1143/jjap.42.2260
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
H. Kinoshita;S. Otani;S. Kamiyama;H. Amano;I. Akasaki;J. Suda;H. Matsunami
二硼化锆（ZrB 2）作为氮化物半导体的导电衬底具有优异的性能。本文介绍了用浮区法生长ZrB_2的方法和ZrB_2的一些性质，并对用分子束外延（MBE）和金属有机物气相外延（MOVPE）异质外延生长氮化镓（GaN）作了简要的总结。通过优化体生长条件，获得了直径为20 mm的ZrB 2单晶。ZrB 2（0001）衬底的解理方向被确认为平行于[1120]，其平行于GaN（0001）的解理方向。通过MBE和MOVPE的外延生长被证明。生长的n型GaN/ZrB 2结构具有欧姆性质的电流-电压特性。这些结果表明，ZrB 2具有应用于氮化物半导体衬底的潜力。
Zirconium diboride (ZrB2) has excellent properties as an electrically conductive substrate for nitride semiconductors. In this paper, the bulk growth of ZrB2 by a floating-zone method and some properties of ZrB2, together with a brief summary of heteroepitaxial growth of gallium nitride (GaN) by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), are presented. By optimizing the bulk growth conditions, a 20-mm-diameter ZrB2 single crystal was obtained. The cleavage direction of the ZrB2 (0001) substrate was confirmed to be parallel to [1120], which is parallel to that of GaN (0001). Epitaxial growth by both MBE and MOVPE was demonstrated. The grown n-type GaN/ZrB2 structure exhibited ohmic-like current–voltage behavior. These results indicate that ZrB2 has potential for application to the substrate for nitride semiconductors.