Xerographic time of flight experiment for the determination of drift mobility in high resistivity semiconductors
Xerographic time of flight experiment for the determination of drift mobility in high resistivity semiconductors
复制标题
用于测定高电阻率半导体漂移迁移率的静电复印飞行时间实验
DOI：
--
复制
发表时间：
1987
期刊：
影响因子：
--
通讯作者：
S. Vaezi
中科院分区：
文献类型：
--
作者：
S. Vaezi
高电阻率半导体中的漂移迁移率可以通过静电复印飞行时间 (XTOF) 技术来确定，该技术的原理不同于众所周知的海恩斯-肖克利实验。详细描述了一种可用于研究高电阻率半导体的实用且廉价的XTOF装置。介绍了非晶硒基感光器中 XTOF 瞬态电流波形的一些示例和分析方法。
Drift mobility in high resistivity semiconductors can be determined from xerographic time of flight (XTOF) techniques whose principles are different from the well known Haynes-Shockley experiment. A practical and inexpensive XTOF apparatus which can be utilized in investigating high resistivity semiconductors is described in detail. Some examples of XTOF transient current waveforms in amorphous selenium-based photoreceptors and method of analysis are presented.