SOME NEW FORMULAS APPLICABLE TO ELECTROCHEMICAL NUCLEATION-GROWTH-COLLISION
SOME NEW FORMULAS APPLICABLE TO ELECTROCHEMICAL NUCLEATION-GROWTH-COLLISION
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DOI：
10.1016/0013-4686(83)85167-6
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发表时间：
1983-01-01
影响因子：
6.6
通讯作者：
FLETCHER, S
中科院分区：
文献类型：
--
作者：
FLETCHER, S
本文提出了一些适用于电化学成核/生长/碰撞的新公式，共分六个部分。第一部分给出了空间、时间和能量概率效应的一般公式。然后在第二部分中描述了一种新的二维成核/生长/碰撞的范例。第三部分总结了我们最近的工作扩散控制的半球形核的生长，包括非平衡和前面的化学反应的影响，而第四部分包括一个讨论的成核作为一个随机过程，并包括空间和时间的子采样公式。第五部分讨论了成核体系正弦和三角形电位扫描测量中感应圈的出现，第六部分列出了适用于晶体生长问题的积分几何公式。
This paper presents some new formulae applicable to electrochemical nucleation/growth/collision, and is divided into six parts. In the first part general formulae for probabilistic effects in space, time and energy are presented. Then in the second part a new paradigm for 2-D nucleation/growth/collision at constant potential is described. Part three summarizes our recent work on the diffusion-controlled growth of hemispherical nuclei, including the effects of non-equilibrium and preceding chemical reaction, while part four consists of a discussion of nucleation as a stochastic process, and includes formulae for spatial and temporal subsampling. Part five discusses the occurrence of inductive loops in sinusoidal and triangular potential scan measurements of nucleating systems, and finally part six lists some formulae in integral geometry applicable to crystal growth problems.