Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
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DOI：
10.1116/1.1705590
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发表时间：
2004-07
期刊：
影响因子：
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通讯作者：
Jinghao Chen;W. Yoo;Zerlinda Y. L. Tan;Y. Wang;D. Chan
中科院分区：
文献类型：
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作者：
Jinghao Chen;W. Yoo;Zerlinda Y. L. Tan;Y. Wang;D. Chan
采用Cl 2/HBr/CHF 3/CF 4/O2等离子体对HfO基高介电常数（K）薄膜HfO 2、HfON、HfSiO和HfAlO的刻蚀特性进行了研究。蚀刻速率根据膜中的化学成分而变化。在HfO 2、HfON、HfSiO和HfAlO中，HfSiO的蚀刻速率随着射频偏置功率的增加而增加最显著。这可能归因于Hf-Si-O的三元网络，其不同于Hf-O、Hf-N、Si-O和Al-O的其它膜的二元网络。由于与Hf-O蚀刻速率相比，高的Hf-N蚀刻速率的影响，HfON的蚀刻速率高于HfO 2的蚀刻速率，而由于低的Al-O蚀刻速率的影响，HfAlO的蚀刻速率低于HfO 2的蚀刻速率。通过X射线光电子能谱和飞行时间二次离子质谱分析了HfO基ZnO的刻蚀残留物和化学组成。CF 4/CHF 3刻蚀后，样品表面有大量的氟化物存在，而CF 4/CHF 3刻蚀后，样品表面有大量的氟化物存在。
The etching properties of HfO based high dielectric constant (K) films, HfO2, HfON, HfSiO, and HfAlO, were investigated using inductively coupled plasma of Cl2/HBr/CHF3/CF4/O2. The etch rates varied depending on the chemical components in the films. Among HfO2, HfON, HfSiO, and HfAlO, the etch rates of HfSiO increased most significantly with increasing radio frequency bias power. This may be attributed to the ternary network of Hf–Si–O that is different from the binary network of other films of Hf–O, Hf–N, Si–O, and Al–O. The etch rates of HfON were higher than those of HfO2 due to the effect of the high Hf–N etch rates compared to the Hf–O etch rates, whereas the HfAlO etch rates were lower than those of HfO2 due to the effect of the low Al–O etch rates. Etch residues and chemical compositions of HfO based dielectrics were analyzed by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy. A significant amount of fluorides existed on the surface after CF4/CHF3 etching whereas...