Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
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DOI：
10.3390/ma8105374
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发表时间：
2015-10-26
期刊：
影响因子：
--
通讯作者：
Wang YH
中科院分区：
文献类型：
--
作者：
Lee KJ;Wang LW;Chiang TK;Wang YH
采用溶胶-凝胶法在氧化铟锡（ITO）/玻璃衬底上制备了钛酸镍酸锶（SrTiNi）薄膜，并将其应用于阻变存储器（RRAM）。铝（Al）、钛（Ti）、钨（W）、金（Au）和铂（Pt）被用作基于STN的RRAM中的顶部电极以探测开关行为。在Al/ITO和Pt/ITO/ITO RRAM中，置位电压和复位电压的双极阻变特性是反向的，这部分归因于ITO中顶电极的功函数不同。对拟合结果和温度特性的分析表明，Al/Pt/ITO开关主要是由于氧基官能团的吸附/释放，而Pt/Pt/ITO开关则与金属电极离子的扩散有关。Al/ZnO/ITO RRAM表现出高阻态（HRS）和低阻态（LRS）之间>106的高电阻比，以及>105 s的保持能力。此外，Pt/ITO/ITO RRAM的HRS/LRS电阻比>103，保持能力>105 s。
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and reset voltages is in opposite bias in the Al/STN/ITO and Pt/STN/ITO RRAMs, which can be partly ascribed to the different work functions of top electrodes in the ITO. Analyses of the fitting results and temperature-dependent performances showed that the Al/STN/ITO switching was mainly attributed to the absorption/release of oxygen-based functional groups, whereas the Pt/STN/ITO switching can be associated with the diffusion of metal electrode ions. The Al/STN/ITO RRAM demonstrated a high resistance ratio of >106 between the high-resistance state (HRS) and the low-resistance state (LRS), as well as a retention ability of >105 s. Furthermore, the Pt/STN/ITO RRAM displayed a HRS/LRS resistance ratio of >103 and a retention ability of >105 s.