Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current
Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current
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用于根据瞬态放电电流确定介电膜中陷阱的密度和发射率的图形峰值分析方法
DOI：
10.1063/1.1429768
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发表时间：
2002
影响因子：
3.2
通讯作者：
Masaru Simizu
中科院分区：
文献类型：
--
作者：
Hideharu Matsuura;T. Hase;Y. Sekimoto;Masaharu Uchikura;Masaru Simizu
本研究的目的是提出并验证一种图形化峰值分析方法[放电电流瞬变光谱(DCTS)]，该方法可以根据恒温下电容器中的暂态放电电流Idis(T)确定介质薄膜中陷阱的密度和发射率，而不同于热刺激电流(TSC)。从理论上证明了DCT可以区分发射速率相近的圈闭。在实验上，用DCTS测量了Pb(Zr， ，Ti)O_3薄膜中五种陷阱的密度和发射率。这5个发射率介于1×10−3 S−1和7×10−2 S−1之间。在一个发射率的假设下，TSC确定了一种陷阱，用DCT将其区分为5种发射率相近的陷阱。
The purpose of this study is to propose and test the graphical peak analysis method [discharge current transient spectroscopy (DCTS)] for determining the densities and emission rates of traps in a dielectric thin film from the transient discharge current Idis(t) in a capacitor at a constant temperature, different from thermally stimulated current (TSC). It is theoretically demonstrated that DCTS can distinguish among traps with close emission rates. Experimentally, the densities and emission rates of five traps in Pb(Zr, Ti)O3 thin films are determined using DCTS. Here, these five emission rates are between 1×10−3 s−1 and 7×10−2 s−1. One kind of trap, which was determined by TSC under the assumption of one emission rate, is found to be distinguished into five kinds of traps with close emission rates by DCTS.