Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules
Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules
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DOI：
10.1063/1.2400397
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发表时间：
2006-12-04
影响因子：
4
通讯作者：
Gammon, D.
中科院分区：
文献类型：
--
作者：
Bracker, A. S.;Scheibner, M.;Gammon, D.
大多数自组装量子点分子本质上是不对称的，不对称的量子点是由于晶体生长控制不完善造成的。作者通过分子束外延培养了垂直排列的InAs/GaAs量子点对，引入了有意的不对称，限制了内在生长波动的影响，并允许选择性地穿隧电子或空穴。他们提出了一个系统的研究隧道能量在大范围的点间势垒厚度。本文讨论的概念为更复杂的量子点纳米结构的系统设计和表征提供了重要的工具。(c) 2006年美国物理研究所。
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. The authors have grown vertically aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. They present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures. (c) 2006 American Institute of Physics.