Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation
Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation
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窄宽度 SOI 器件：量子力学尺寸量子化效应和无意掺杂对器件运行的作用
DOI：
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发表时间：
2005
影响因子：
3.1
通讯作者：
S. Ahmed
中科院分区：
文献类型：
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作者：
D. Vasileska;S. Ahmed
传统MOSFET器件的尺寸极限使得世界各地的研究人员开始寻找新的器件概念，如超薄体（UTB）绝缘体上硅（SOI）、双栅SOI器件、FinFET、聚焦离子束MOSFET等。这些新器件抑制了传统MOSFET所表现出的一些短沟道效应。然而，许多老问题仍然存在，新问题开始出现。例如，在UTB SOI器件、双栅极MOSFET和FinFET器件中，量子力学尺寸量化效应显著影响整体器件行为。此外，无意掺杂导致关键器件参数的相当大的波动。在这项工作中，我们调查的作用，二维量子化效应的操作中的窄宽度SOI器件使用有效的潜在计划结合三维系综Monte Carlo粒子为基础的设备模拟器。我们还调查了无意掺杂对该设备的操作的影响。我们发现，需要适当的包括量子化效应来解释实验观察到的阈值电压的宽度依赖性。关于无意掺杂的问题，靠近沟道的源极端的中间部分的杂质对器件驱动电流和器件阈值电压的波动具有最显著的影响。
The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon-on-insulator (SOI), dual-gate SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFETs. However, a lot of the old issues still remain and new issues begin to appear. For example, in UTB SOI devices, dual-gate MOSFETs and in FinFET devices, quantum-mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in key device parameters. In this work we investigate the role of two-dimensional quantization effects in the operation of a narrow-width SOI device using an effective potential scheme in conjunction with a three-dimensional ensemble Monte Carlo particle-based device simulator. We also investigate the influence of unintentional doping on the operation of this device. We find that proper inclusion of quantization effects is needed to explain the experimentally observed width dependence of the threshold voltage. With regard to the problem of unintentional doping, impurities near the middle portion of the source end of the channel have most significant impact on the device drive current and the fluctuations in the device threshold voltage.