High quality factor cold sintered LiF ceramics for microstrip patch antenna applications
High quality factor cold sintered LiF ceramics for microstrip patch antenna applications
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适用于微带贴片天线应用的高品质因数冷烧结 LiF 陶瓷
DOI：
10.1016/j.jeurceramsoc.2021.03.052
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发表时间：
2021-04-14
影响因子：
5.7
通讯作者：
Song, Kai Xin
中科院分区：
文献类型：
--
作者：
Liu, Bing;Sha, Ke;Song, Kai Xin
采用冷烧结方法对LiF陶瓷进行预密实，其相对密度从125 MPa时的72.1%显著提高到500 MPa时的88.9%。以下是800 ？C进一步优化了致密化，在375 MPa和500 MPa下，相对密度分别达到95.6%和97.6%的接近完全致密化。Qf值随着单轴压力的增大而增大，在375 MPa时达到最大值134050 GHz，是常规烧结（73800ghz）的1.82倍。？R和？F主要由相对密度决定，得到的最佳微波介电性能如下：？r = 8.45, Qf =134,050 GHz, ？f = ?135 ppm / ? C。以LiF陶瓷为衬底设计并制作了微带贴片天线，在6.81 GHz谐振频率下，S11为20.3 dB，模拟效率为90.5%，增益为4.25 dB。
Cold sintering is adopted to pre-densify LiF ceramics, where the relative density increases significantly from 72.1 % at 125 MPa to 88.9 % at 500 MPa. The following post-annealings at 800 ?C lead to further optimizations of densification, and near-full densifications with relative densities of 95.6 % and 97.6 % are achieved at 375 and 500 MPa, respectively. Qf value increased with increasing uniaxial pressure until it reaches the maximum value of 134,050 GHz at 375 MPa, which is 1.82 times higher than that via conventional sintering (73,800 GHz). ?r and ?f are mainly determined by the relative density, and the optimum microwave dielectric properties are obtained as follows: ?r = 8.45, Qf =134,050 GHz, ?f =?135 ppm/?C. A microstrip patch antenna is designed and fabricated using the LiF ceramic as the substrate, which gives an S11 of ?20.3 dB, a simulated high efficiency of 90.5 %, and a gain of 4.25 dB at the resonant frequency of 6.81 GHz.