Current-induced two-level fluctuations in pseudo-spin-valve (Co/Cu/Co) nanostructures -: art. no. 257209
Current-induced two-level fluctuations in pseudo-spin-valve (Co/Cu/Co) nanostructures -: art. no. 257209
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DOI：
10.1103/physrevlett.91.257209
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发表时间：
2003-12-19
影响因子：
8.6
通讯作者：
Wegrowe, JE
中科院分区：
文献类型：
--
作者：
Fábián, A;Terrier, C;Wegrowe, JE
在室温下，自旋极化电流为10(7)A/cm(2)，可触发电沉积纳米线（直径约为40 nm，长度约为6000 nm）中Co(10 nm)/Cu(10 nm)/Co（30 nm）伪自旋阀柱磁化状态的两能级波动。在平行和反平行磁化状态下停留时间的统计性质揭示了两种依赖于电流强度的性质不同的效应。电流似乎具有确定为平衡这些时间所需的偏置场的场的作用。当电流极性反转时，偏置场改变符号。在此磁场下，电流密度为10(7)a /cm(2)的效果是降低切换到微秒范围的平均时间。这种效应与电流的符号无关，可以用磁化的有效温度来解释。
Two-level fluctuations of the magnetization state of pseudo-spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (similar to40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10(7) A/cm(2) at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with qualitatively different dependences on current intensity. The current appears to have the effect of a field determined as the bias field required to equalize these times. The bias field changes sign when the current polarity is reversed. At this field, the effect of a current density of 10(7) A/cm(2) is to lower the mean time for switching down to the microsecond range. This effect is independent of the sign of the current and is interpreted in terms of an effective temperature for the magnetization.