Damp Heat Durability of Al-Doped ZnO Transparent Electrodes with Different Crystal Growth Orientations
Damp Heat Durability of Al-Doped ZnO Transparent Electrodes with Different Crystal Growth Orientations
复制标题
DOI：
10.1149/2.0261912jss
复制
发表时间：
2019-12
影响因子：
2.2
通讯作者：
Fahmi Machda;Takaya Ogawa;H. Okumura;K. Ishihara
中科院分区：
文献类型：
--
作者：
Fahmi Machda;Takaya Ogawa;H. Okumura;K. Ishihara
采用反应溅射法制备了Al掺杂ZnO（AZO）透明电极，研究了晶体取向对薄膜耐久性的影响。在沉积过程中，氩气流量从3到60 sccm变化，而氧气流量固定为60 sccm。随着氩气流量的增加，晶体取向呈现出从（110）到（002）的主要转变。在85%相对湿度和85 ℃的湿热测试中，具有更多晶体取向变化的薄膜表现出更多的霍尔迁移率降低，而具有（002）晶体取向的薄膜表现出较少的载流子浓度降低。随着时间的推移，电导率退化是单调的氩气流，和趋势是更类似于降低载流子浓度，而不是降低流动性。这表明，AZO薄膜之间的降解差异，而造成的有效保护载流子浓度的主要晶体取向。
Al-doped ZnO (AZO) transparent electrodes deposited by reactive sputtering are investigated to clarify the influences of crystal orientations on film durability. During the deposition, argon gas flow was varied from 3 to 60 sccm amidst fixed oxygen gas flow at 60 sccm. With increasing argon gas flow, the crystal orientations exhibit a major transition from (110) to (002). During damp heat test at 85% relative humidity and 85 C, the films with more variations in crystal orientations exhibit more decreased Hall mobility, while the films having crystal orientation (002) exhibit less reduced carrier concentrations. Conductivity degradation over time is monotonous with argon gas flow, and the tendency is more similar to reduced carrier concentrations rather than decreased mobility. It is suggested that the degradation differences among AZO films are rather caused by the effectiveness of major crystal orientation in protecting carrier concentrations.