On the origin of contact resistances in graphene devices fabricated by optical lithography
On the origin of contact resistances in graphene devices fabricated by optical lithography
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DOI：
10.1007/s00339-015-9582-5
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发表时间：
2016-02-01
影响因子：
2.7
通讯作者：
Mertin, Wolfgang
中科院分区：
文献类型：
--
作者：
Chavarin, Carlos Alvarado;Sagade, Abhay A.;Mertin, Wolfgang
接触电阻是限制石墨烯基电子和光电器件性能的关键瓶颈。采用原子力显微镜图形化、Kelvin探针力显微镜和显微拉曼成像相结合的方法，研究了光刻胶对石墨烯器件接触电阻的影响。我们发现，通过光学光刻制造的设备显示出显着更大的接触电阻相比，电子束光刻使用聚甲基丙烯酸甲酯作为抗蚀剂生产的设备。这种差异归因于在光学光刻之后在接触金属和石墨烯之间残留的3-4 nm厚的残留层。
The contact resistance is a key bottleneck limiting the performance of graphene-based electronic and optoelectronic devices. Using a combined approach of atomic force microscopy patterning, Kelvin probe force microscopy and micro-Raman mapping, we study the influence of optical lithography resists on the contact resistance in graphene devices. We find that devices fabricated by optical lithography show a significantly larger contact resistance compared to devices produced by electron beam lithography using polymethylmethacrylate as resist. This difference is attributed to a 3-4-nm-thick residual layer remaining in between the contact metal and the graphene after optical lithography.