Surface segregation of Sb in doped TiO2 rutile
Surface segregation of Sb in doped TiO2 rutile
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DOI：
10.1016/0169-4332(95)00160-3
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发表时间：
1995-11
影响因子：
6.7
通讯作者：
A. Gulino;G. Condorelli;I. Fragalà;R. Egdell
中科院分区：
文献类型：
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作者：
A. Gulino;G. Condorelli;I. Fragalà;R. Egdell
掺杂 TiO2 金红石陶瓷 (Ti1 − 5 4xSbxO20 < x < 0.1 ) 中 Sb 的表面浓度已通过角分辨核心级 X 射线光电子能谱 (AR-XPS) 进行了测量。通过交替 Ar+ 离子轰击和岩心液位测量获得了深度剖面。在低掺杂水平下，Sb 通过在大量离子平面中取代 Ti 来进行偏析，而在较高 Sb 掺杂水平下，有证据表明存在新的 SbTiO 非晶表面相，其厚度涉及约五个离子平面。提出了在整个研究的掺杂范围内功函数单调递减的合理化。
The surface concentration of Sb in doped TiO2rutile ceramics (Ti1 − 5 4xSbxO20 < x < 0.1 ), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new SbTiO amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed.