Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
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DOI：
10.1143/jjap.44.4770
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发表时间：
2005-07
影响因子：
1.5
通讯作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima
中科院分区：
文献类型：
--
作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima
采用铝诱导结晶（AIC）技术进行了多晶硅（poly-Si）薄膜的低温制备，并对其结构性能进行了研究。在我们的实验中，为了防止Al薄膜的自然氧化，在不破坏真空的情况下，通过电子束蒸发在SiO2/Si衬底上形成非晶硅(a-Si)/Al双层。然后将a-Si/Al/SiO2/Si结构在400°C的低温下加热以引发AIC。通过扫描透射电子显微镜和能量色散X射线分析证实，即使Al膜没有自然氧化，也会诱导a-Si/Al双层的层交换。讨论了a-Si/Al双层的层交换机制。此外，通过扫描电子显微镜和椭圆光谱仪验证，大约1:1的a-Si/Al厚度比适合实现多晶硅的平坦表面形貌。此外，通过X射线衍射和取向成像显微镜发现，随着a-Si/Al双层厚度的减小，Si(111)取向晶粒占主导地位。
Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO2/Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1:1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.