A Long-term View of Research Targets in Nanoelectronics
A Long-term View of Research Targets in Nanoelectronics
复制标题
纳米电子学研究目标的长远观点
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
T. Wooldridge
中科院分区：
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作者：
R. Cavin;V. Zhirnov;G. Bourianoff;J. Hutchby;D. Herr;H. Hosack;W. Joyner;T. Wooldridge
介绍了2004年12月在美国国家科学基金会华盛顿举办的第二届硅纳米电子学及以后研讨会的情况。其目标是设定研究方向，积极追求将CMOS技术扩展到其极限，并开发超越CMOS技术，以保持性能/成本随时间的历史指数级改进。讲习班的主题是：（1）后CMOS信息处理技术，（2）将基于电荷的技术扩展到极限的新材料和组装方法，（3）多尺度/多现象建模和模拟，（4）新型纳米结构，以及（5）纳米环境安全和健康。
This paper presents a summary of the second workshop on Silicon Nanoelectronics and Beyond held at the National Science Foundation in Washington DC in December 2004. The objective was to set research directions to vigorously pursue both extending the CMOS technology to its limits and to develop Beyond-CMOS technologies to sustain the historical exponential improvement in performance/cost with time. Workshop themes were: (1) Post CMOS information processing technologies, (2) Novel materials and assembly methods for extending charge-based technology to its ultimate limits, (3) Multi-scale/multi-phenomena modeling and simulation, (4) Novel nano-architectures, and (5) Nano environmental safety and health.