An in situ investigation of electromigration in Cu nanowires
An in situ investigation of electromigration in Cu nanowires
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DOI：
10.1088/0957-4484/20/7/075706
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发表时间：
2009-02-18
期刊：
影响因子：
3.5
通讯作者：
Divan, Ralu
中科院分区：
文献类型：
--
作者：
Huang, Qiaojian;Lilley, Carmen M.;Divan, Ralu
采用电阻测量和原位扫描电子显微镜技术研究了电子束蒸发沉积的铜纳米线的电迁移。在电迁移过程中，空穴形成在阴极端，而小丘（或挤出）生长接近阳极端。测量了不同电流密度下的失效寿命，并估算了导线的平均温度。发现对于90 nm和141 nm的线宽度，分别为1.06 eV和0.94 eV的电迁移激活能。这些结果表明，在电迁移过程中，铜的质量传输主要发生沿着线表面。俄歇电子能谱的进一步研究表明，铜原子和表面污染物的碳和氧从阴极迁移到阳极的电应力。
Electromigration in copper (Cu) nanowires deposited by electron beam evaporation has been investigated using both resistance measurement and the in situ scanning electron microscopy technique. During electromigration, voids formed at the cathode end while hillocks ( or extrusions) grew close to the anode end. The failure lifetimes were measured for various applied current densities and the mean temperature in the wire was estimated. Electromigration activation energies of 1.06 eV and 0.94 eV were found for the wire widths of 90 nm and 141 nm, respectively. These results suggest that the mass transport of Cu during electromigration mainly occurs along the wire surfaces. Further investigations of the Auger electron spectrum show that both Cu atoms and the surface contaminants of carbon and oxygen migrate from cathode to anode under the electrical stressing.