Surface atomic geometry of Si(001)-(2×1): A low-energy electron-diffraction structure analysis
Surface atomic geometry of Si(001)-(2×1): A low-energy electron-diffraction structure analysis
复制标题
Si(001)-(2×1)的表面原子几何结构：低能电子衍射结构分析
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
W. Moritz
中科院分区：
文献类型：
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作者：
H. Over;J. Wasserfall;W. Ranke;C. Ambiatello;R. Sawitzki;D. Wolf;W. Moritz
Si（001）-2 1表面的重构由不对称和屈曲的Si二聚体组成。二聚体中上下原子之间的垂直间距约为0.72±0.05 A，二聚体键长为2.24±0.08 A，略小于体相的Si-Si距离。二聚体的倾角为19±2°。Si二聚体的形成诱导显著的变形在基板中，可检测到下降到第五Si层。结构的确定是基于两个独立的低能电子衍射数据集在两个不同的实验室。结构的结果同意在误差范围内，虽然实验数据集之间发生显着的差异。实验数据的这些差异可能归因于不同的制备程序。
The reconstruction of the Si(001)-2×1 surface consists of asymmetric and buckled Si dimers. The vertical separation between the up and the down atom within the dimer is about 0.72±0.05 A and the dimer bond length of 2.24±0.08 A has been found to be slightly smaller than the Si-Si distance in the bulk. The tilt of the dimer is 19±2°. The formation of Si dimers induces pronounced distortions in the substrate that were detectable down to the fifth Si layer. The structure determination is based on two independent low-energy electron-diffraction data sets taken in two different laboratories. The structural results agree well within the error limits, though noticeable differences occur between the experimental data sets. These differences in the experimental data can possibly be attributed to different preparation procedures.