A tunable, dual mode field-effect or single electron transistor
A tunable, dual mode field-effect or single electron transistor
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可调谐双模场效应或单电子晶体管
DOI：
10.1063/1.3678042
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发表时间：
2012
影响因子：
4
通讯作者：
B. Previtali
中科院分区：
文献类型：
--
作者：
B. Roche;B. Voisin;X. Jehl;R. Wacquez;M. Sanquer;M. Vinet;V. Deshpande;B. Previtali
采用绝缘体上硅金属氧化物半导体工艺，研制了一种既可作为场效应晶体管又可作为单电子晶体管的双模器件。根据背栅极化，电子岛在器件的前栅下积累（SET机制），或者通过用负前栅电压夹断底部沟道来获得场效应晶体管。观察到这两种情况之间的逐渐过渡。这种双重功能在非重叠绝缘体上硅沟道中使用垂直和水平可调电位梯度。
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.