Element-specific characterization of the interface magnetism in [Co2MnGe/Au]n multilayers by x-ray resonant magnetic scattering

Element-specific characterization of the interface magnetism in [Co2MnGe/Au]n multilayers by x-ray resonant magnetic scattering
复制标题

通过 X 射线共振磁散射对 [Co2MnGe/Au]n 多层中的界面磁性进行元素特定表征

DOI:
--
复制
发表时间:
2005
期刊:
影响因子:
--
通讯作者:
H. Zabel
H. Zabel
中科院分区:
--
文献类型:
--
作者:
J. Grabis;A. Bergmann;A. Nefedov;K. Westerholt;H. Zabel

文献摘要

被引文献

相似文献

在判断这些材料在未来自旋电子器件中的应用前景时,铁磁半金属赫斯勒化合物与其他金属、绝缘体和半导体界面的磁性是一个关键问题。我们利用 Co 和 Mn L{sub 2,3} 边缘能量范围内的圆偏振 X 射线辐射,通过 X 射线共振磁反射率研究高质量 [Co{sub 2}MnGe/Au]{sub 50} 多层中铁磁半金属 Co{sub 2}MnGe 的界面磁性。对超晶格布拉格峰处反射率的磁性部分的分析可以精确确定 Co{sub 2}MnGe 层内的磁化分布。我们发现锰和钴自旋的轮廓明显不同,并且相对于生长方向不对称。在室温下,Co{sub 2}MnGe 层底部存在厚度约为 0.45 nm 的非铁磁界面层,顶部厚度约为 0.3 nm。此外,非共振和共振磁漫散射的比较表明,相关的结构粗糙度和磁粗糙度几乎相同,相应的长度尺度是面内微晶尺寸。
The magnetism of the ferromagnetic half-metallic Heusler compounds at the interface with other metals, insulators, and semiconductors is a critical issue when judging the prospects for these materials to be used in future spintronic devices. We study the interface magnetism of the ferromagnetic half metal Co{sub 2}MnGe in a high-quality [Co{sub 2}MnGe/Au]{sub 50} multilayer by x-ray resonant magnetic reflectivity using circularly polarized x-ray radiation in the energy range of the Co and Mn L{sub 2,3} edges. An analysis of the magnetic part of the reflectivity at the superlattice Bragg peaks allows a precise determination of the magnetization profile within the Co{sub 2}MnGe layers. We find that the profile is definitely different for Mn and Co spins and asymmetric with respect to the growth direction. At room temperature nonferromagnetic interface layers exist with a thickness of about 0.45 nm at the bottom and 0.3 nm at the top of the Co{sub 2}MnGe layers. Additionally, the comparison of the nonresonant and resonant magnetic diffuse scattering reveals that the correlated structural and magnetic roughness are almost identical, the corresponding length scale being the in-plane crystallite size.