Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy
Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy
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DOI：
10.1143/jjap.44.l7
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发表时间：
2005-01-01
期刊：
影响因子：
--
通讯作者：
Ichinose, N
中科院分区：
文献类型：
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作者：
Shimamura, K;Víllora, EG;Ichinose, N
氮化物化合物的外延生长的金属有机物气相外延（MOVPE）技术首次证明β-Ga 2 O 3单晶衬底，这是近紫外透明和n型导电。采用低温导电缓冲层，获得了高质量的（0001）GaN外延层，并具有窄的带边发光。InGaN多量子阱（MQW）结构也被成功地生长。第一个蓝色发光二极管（LED）的β-镓氧化物与垂直电流注入的演示。
Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated for the first time on beta-Ga2O3 single crystal substrates, which are near-UV transparent and n-type conductive. High-quality (0001) GaN epi-layer with a narrow bandedge luminescence was obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structure was also successfully grown. The first blue light-emitting diode (LED) on beta-Ga2O3 with vertical current injection is demonstrated.