SIS junction reactance complete compensation
SIS junction reactance complete compensation
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SIS结电抗完全补偿
DOI：
10.1109/20.133753
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发表时间：
1991
影响因子：
2.1
通讯作者：
M. Tarasov
中科院分区：
文献类型：
--
作者：
V. Belitsky;M. Tarasov
具有异相电流I/sub kk/阻抗分量的超导体-绝缘体-超导体(SIS)结几何电容形成足够的结电抗X/sub SIS/=(omega C+B/sub Q/)/sup -1/。建议谐振 omega C 和 B/sub Q/ 的方法是使用一个额外的相同 SIS 结，通过长线阻抗逆变器连接到第一个结，并且 RF+DC 与第一个对称偏置。计算了没有量子电抗的泵浦 I-V 曲线和系统的频率阻抗模式。计算表明，在 SIS 结电抗完全补偿的情况下，在高阶准粒子步骤中存在高甚至负的感应动态电阻区域。建议的方法可用于 SIS 混频器和检测器，以获得更好的 RF 匹配。
Superconductor-insulator-superconductor (SIS) junction geometrical capacitance with out of phase current I/sub kk/ impedance component forms sufficient junction reactance X/sub SIS/=( omega C+B/sub Q/)/sup -1/. It is suggested that the way to resonate out both omega C and B/sub Q/ is by using an additional identical SIS junction connected to the first through a long line impedance inverter and RF+DC biased symmetrically to the first. Pumped I-V curves without quantum reactance and frequency impedance patterns of the system are calculated. Calculations demonstrated the presence of high and even negative induced dynamic resistance regions at high-order quasiparticle steps for the case of SIS junction reactance complete compensation. The suggested method may be used in SIS mixers and detectors for a better RF matching.