Open-Access 3-μm SOI Waveguide Platform for Dense Photonic Integrated Circuits
Open-Access 3-μm SOI Waveguide Platform for Dense Photonic Integrated Circuits
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DOI：
10.1109/jstqe.2019.2908551
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发表时间：
2019-09-01
影响因子：
4.9
通讯作者：
Vehmas, Tapani
中科院分区：
文献类型：
--
作者：
Aalto, Timo;Cherchi, Matteo;Vehmas, Tapani
本文概述了VTT公开提供的3 μ m绝缘体上硅（SOI）平台，该平台适用于近红外和中红外应用的光子集成电路（pic）的实现。这种厚soi PIC平台的具体优点包括低光学损耗（类似于0.1 dB/cm），超密集集成（μ m尺度弯曲），小偏振依赖性（低至零双折射），以及能够承受相对较高的光功率（> 1w）。制造技术基于直线步进和150毫米晶圆尺寸。波导平台的开放访问由设计套件、晶圆级测试、多项目晶圆运行、专用研发运行和中小批量制造支持。
This paper gives an overview of the 3-mu m silicon-on-insulator (SOI) platform that is openly available from VTT and suitable for the realization of photonic integrated circuits (PICs) for near and mid-infrared applications. Specific benefits of this thick-SOI PIC platform include low optical losses (similar to 0.1 dB/cm), ultradense integration (mu m-scale bends), small polarization dependency (down-to-zero birefringence), and ability to tolerate relatively high optical powers (>1 W). Fabrication technology is based on an i-line stepper and 150-mm wafer size. Open access to the waveguide platform is supported by design kits, wafer-level testing, multi-project wafer runs, dedicated R&D runs, and small-to-medium volume manufacturing.