Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer
Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer
复制标题
由于金属氧化物覆盖层导致加速氧化而导致 ZrO2/Si 界面处的粗糙度
DOI：
10.1063/1.1629146
复制
发表时间：
2003
影响因子：
4
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
--
作者：
Heiji Watanabe
我们通过界面氧化和氧化后退火引起的原子级粗糙度研究了 ZrO2/Si 界面的反应。当通过原位再氧化薄 Zr 金属层来制造 ZrO2 时，当初始 Zr 层变厚时，导致 Zr-硅酸盐形成的界面氧化加速。这意味着界面氧化不是由氧化剂通过高 k 膜的扩散主导的，而是由金属氧化物内发生的催化效应加速的。我们还发现，与 SiO2/Si 界面相比，高 k/Si 界面的粗糙度随着界面硅酸盐层的生长而单调增加。这些结果证明了后退火条件对高 k 栅极电介质的重要性。
We investigated reactions at ZrO2/Si interfaces by means of interface oxidation and atomic-scale roughness caused by postoxidation annealing. When fabricating ZrO2 by in situ reoxidation of a thin Zr metal layer, the interface oxidation that results in Zr–silicate formation accelerates, when the initial Zr layer becomes thicker. This implies that interface oxidation is not dominated by oxidant diffusion through the high-k film, but is accelerated by catalytic effects that occurs within the metal oxide. We also found that, in contrast with a SiO2/Si interface, roughness at the high-k/Si interface monotonously increases with the growth of the interface silicate layers. These results demonstrate the importance of postannealing conditions on high-k gate dielectrics.