Quantum kinetic theory of shift-current electron pumping in semiconductors
Quantum kinetic theory of shift-current electron pumping in semiconductors
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DOI：
10.1088/0953-8984/12/22/317
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发表时间：
2000-06-05
影响因子：
2.7
通讯作者：
Kr치l, P
中科院分区：
文献类型：
--
作者：
Kr치l, P
我们提出了一种在非中心对称半导体中产生移位电流的激光束理论。当被激发的电子在不同波段之间转移或在这些波段内散射时，电流就产生了，并且在基本细胞中不对称地移动了它们的质量中心。利用非平衡格林函数导出了热载流子分布的量子动力学方程和感应电流的表达式。在应用中，我们简化了玻尔兹曼极限的方法，并用它来模拟存在纵向光学声子散射的激光激发砷化镓。位移电流是在稳态状态下计算的。
We develop a theory of laser beam generation of shift currents in non-centrosymmetric semiconductors. The currents originate when the excited electrons transfer between different bands or scatter inside these bands, and asymmetrically shift their centres of mass in elementary cells. Quantum kinetic equations for hot-carrier distributions and expressions for the induced currents are derived using non-equilibrium Green functions. In applications, we simplify the approach to the Boltzmann limit and use it to model laser-excited GaAs in the presence of longitudinal optical phonon scattering. The shift currents are calculated in a steady-stare regime.