Simulation Schemes in 2D Nanoscale MOSFETs: A WKB Based Method
Simulation Schemes in 2D Nanoscale MOSFETs: A WKB Based Method
复制标题
2D 纳米级 MOSFET 仿真方案：基于 WKB 的方法
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
M. Mouis
中科院分区：
文献类型：
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作者：
C. Negulescu;N. Ben Abdallah;E. Polizzi;M. Mouis
本文采用WKB近似建立了一个模拟纳米级MOSFET的模型，降低了数值计算的开销。该方法是基于薛定谔-泊松方法与开放边界条件（QTBM）。在仿真时间上有显著的增益，得到了准确的结果。
The WKB approximation is used in this paper to develop a model simulating nanoscale MOSFETs with a reduced numerical cost. The method is based on the Schrödinger-Poisson approach with open boundary conditions (QTBM). Accurately results have been obtained with significantly gain in simulation time.