Thin-oxide damage from gate charging during plasma processing
Thin-oxide damage from gate charging during plasma processing
复制标题
等离子处理过程中栅极充电造成的薄氧化层损坏
DOI：
10.1109/55.145056
复制
发表时间：
1992
影响因子：
4.9
通讯作者：
J. Mcvittie
中科院分区：
文献类型：
--
作者：
S. Fang;J. Mcvittie
采用“天线”结构研究了等离子体对小栅极MOS电容的电荷损伤。经过O/SUB_2/等离子体阶跃后，界面态密度随天线面积的增大而增大，变化幅度为两个数量级。等离子体充电过程中空穴陷阱引起的击穿机制得到了实验证据的支持，该机制包括电荷击穿和隧道电流的退火和极性效应。此外，氧化物的磁化率取决于氧化物的生长条件，并且可以通过负偏压温度老化来预测。
The plasma-induced charge damage to small gate gate MOS capacitors is investigated by using 'antenna' structures. After an O/sub 2/ plasma step the interface state density increases with increasing antenna area and varies by two orders of magnitude. A hole trapping-induced breakdown mechanism during plasma charging is supported by experimental evidence which includes annealing and polarity effects for charge to breakdown and tunneling currents. In addition, oxide susceptibility is shown to depend on oxide growth conditions and is predictable by negative bias-temperature aging.<<ETX>>