The influence of the topmost nitrogen atoms on In incorporation efficiency during InGaN MOVPE growth
The influence of the topmost nitrogen atoms on In incorporation efficiency during InGaN MOVPE growth
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InGaN MOVPE 生长过程中最顶层氮原子对 In 掺入效率的影响
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
Koichi Kakimoto
中科院分区:
文献类型:
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作者:
Tomoe Yayama;Yoshihiro Kangawa;Koichi Kakimoto