Low-temperature growth of ZnO nanowire array by a simple physical vapor-deposition method
Low-temperature growth of ZnO nanowire array by a simple physical vapor-deposition method
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DOI：
10.1021/cm020465j
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发表时间：
2003-08-26
影响因子：
8.6
通讯作者：
Lee, HJ
中科院分区：
文献类型：
--
作者：
Lyu, SC;Zhang, Y;Lee, HJ
采用简单的物理气相沉积方法，在450 ℃低温下，在Al2O3衬底上成功制备了取向良好的单晶纤锌矿氧化锌（ZnO）纳米线阵列。ZnO纳米线的直径和生长速率随着生长温度的增加而增加。TEM观察表明，ZnO纳米线是沿着c轴方向合成的六方晶体结构。我们证明了ZnO纳米线遵循ZnO核上的自催化生长机制。除了高质量的ZnO纳米线，有时也观察到一个迷人的层次有序的ZnO结构。
Well-aligned single-crystalline wurzite zinc oxide (ZnO) nanowire array was successfully fabricated on an Al2O3 substrate by a simple physical vapor-deposition method at a low temperature of 450 degreesC. The diameter and growth rate of ZnO nanowires increased as a function of growth temperature. TEM observation showed that the ZnO nanowires were synthesized along the c-axial direction of the hexagonal crystal structure. We demonstrate that ZnO nanowires followed the self-catalyzed growth mechanism on the ZnO nuclei. Besides high-quality ZnO nanowires, sometimes a fascinating hierarchically ordered ZnO structure was also observed.