Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
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DOI：
10.1016/j.jcrysgro.2014.03.041
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发表时间：
2014-06-15
影响因子：
1.8
通讯作者：
Volz, K.
中科院分区：
文献类型：
--
作者：
Ludewig, P.;Bushell, Z. L.;Volz, K.
本文讨论了用金属有机物气相外延（MOVPE）在GaAs上连续供给前驱气体外延生长Ga（AsBi）的方法。由于所需的低生长温度，选择液体前体三乙基镓（TEGa）、叔丁基胂（TBA）和三甲基铋（TMBi）。研究了TMBi/V和VAIL比、生长温度和生长速率等生长参数对Bi掺杂的影响。实现了具有良好化学均匀性和光滑Ga（AsBi）/GaAs异质界面而不形成金属液滴的含有高达5% Bi的层，并且显示了超过7% Bi的掺入。此外，它被发现，Bi作为表面活性剂在生长过程中，降低了生长速率和杂质的掺入，并提高了几个数量级的集成光致发光信号。(C)2014爱思唯尔有限公司版权所有。
In this paper we discuss the epitaxial growth of Ga(AsBi) on GaAs under continuous precursor gas supply by metal organic vapor phase epitaxy (MOVPE). Due to the required low growth temperatures, liquid precursors triethylgallium (TEGa), tertiarybutylarsine (TBAs) and trimethylbismuth (TMBi) were chosen. The influence of several growth parameters such as TMBi/V and VAIL ratios, the applied growth temperature and growth rate on the Bi incorporation was investigated. Layers containing up to 5% Bi with good chemical homogeneity and smooth Ga(AsBi)/GaAs hetero-interfaces without metallic droplet formation were realized and beyond that incorporation of more than 7% Bi was shown. Furthermore it was found that Bi acts as surfactant during the growth, reducing the growth rate and impurity incorporation and improving the integrated photoluminescence signal by several orders of magnitude. (C) 2014 Elsevier B.V. All rights reserved.